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- 2024
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Mark
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
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- Contribution to journal › Article
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Mark
Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
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- Contribution to journal › Article
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Mark
Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
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- Contribution to journal › Article
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Mark
Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
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- Contribution to journal › Article
- 2023
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Mark
High-quality N-polar GaN optimization by multi-step temperature growth process
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- Contribution to journal › Article
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Mark
Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
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- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
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- Contribution to journal › Article
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Mark
Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys
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- Contribution to journal › Article
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Mark
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
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- Contribution to journal › Article
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Mark
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
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- Contribution to journal › Article